|
气氛Atmosphere
|
炉温Furnace Temp(℃)
|
表面负荷SurfaceLoad(w/cm2)
|
对元件的影响Acting to the element
|
解决办法Solve way
|
|
氨Ammonia
|
1290
|
3.8
|
与sic 作用生成甲烷减少SiO2保护膜Acting on SiC to form thus decrease SiO2 protective film
|
露点激活
Active at dew point
|
|
Co2
|
1450
|
3.1
|
侵蚀碳化硅 Attack SIC
|
用石英管保protected by quartz tube
|
|
18%co
|
1500
|
4.0
|
无影响 NOaction
|
|
|
20%co
|
1370
|
3.8
|
吸咐碳粒影响SiO保护膜Aadsorbing Cgrains to act on SiO2 protective film
|
|
|
卤素
Halogen
|
704
|
3.8
|
侵蚀碳化硅减少SiO2保护膜Adsorbing Cgrains to act on SiO2 protective film
|
用石英管保护
protected by quartz tube
|
|
碳氨化合物
hydrocarbon
|
1310
|
3.1
|
吸附碳粒而致热污染，分解的碳沉积，易造成电器故障Adsorbing C grains causes hot pollution
|
送进充分的空气fill with enough air
|
|
氢
Hydrogen
|
1290
|
3.1
|
与SiC作用反应生成甲烷减少SiO保护膜
Acting on SiC and decreasing SiO2 protective film
|
露点激活
Active at dew point
|
|
甲烷
Methane
|
1370
|
3.1
|
吸附碳粒而致热污染Adsorbing C grains causes hot pollution
|
|
|
N
|
1370
|
3.1
|
与SiC反应形成氨化硅绝缘层 Acting with SiC forms SiN insulating layer
|
|
|
Na
|
1310
|
3.8
|
侵蚀碳化硅 Attack SiC
|
用石英管保
protected by quartz tube
|
|
So2
|
1310
|
3.8
|
侵蚀碳化硅 Attack SiC
|
用石英管保护protected by quartz tube
|
|
真空
Vacuum
|
1204
|
3.8
|
|
|
|
氧Oxygen
|
1310
|
3.8
|
碳化硅被氧化SiC is oxided
|
|
|
水(不同含量）water(different contents)
|
1090-1370
|
3.1～3.6
|
与SiC作用生成硅的水化物Acting on SiC forms hydtate of Si
|
|
